Form factor: 2.5 inch

Capacity: 960GB

Host interface: PCIe Gen3 x 4 Lanes

Spec compliance:  NVMe spec rev. 1.2 (partial), PCI Express CEM spec rev. 3.0, PCI Express base specification rev. 3.0 

NAND flash memory: Samsung V-NAND

Power consumption: Active read/write: Up to 7.5/7.5 W, Idle: 2.5 W (typical)

TBW (@4 KB random write): 1,366 TB

UBER: 1 sector per 10 bits read

MTBF: 2,000,000 hours

Endurance: 1.3 DWPD for 3 years

Sequential read: Up to 2,000 MB/s 

:Sequential write: Up to 1,200 MB/s

Random read: Up to 430K IOPS

Random write: Up to 40K IOPS